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Introduction
Inotera is an advanced wafer fabrication plant using state-of-the-art 300 mm technology and cutting-edge technique in technology deep-UV scanners with 193 nm wavelength and advanced deep trench dry etching process technology
Current Products
90 nm 512 Mb DDR SDRAM
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Process Technology |
90 nm with deep trench capacitor |
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Organization |
x4, x8, x16 |
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Burst Length |
2, 4, or 8 |
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CAS Latency |
2, 2.5 and 3 |
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Power Supply |
2.5V +/- 0.2V |
90 nm 512 Mb DDR2 SDRAM
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Process Technology |
90 nm with deep trench capacitor |
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Organization |
x4, x8, x16 |
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Burst Length |
4 or 8 |
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CAS Latency |
3, 4 and 5 |
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Power Supply |
1.8V +/- 0.1V |
90 nm 1Gb DDR2 SDRAM
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Process Technology |
90 nm with deep trench capacitor |
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Organization |
x4, x8, x16 |
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Burst Length |
4 or 8 |
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CAS Latency |
3, 4 and 5 |
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Power Supply |
1.8V +/- 0.1V |
Note: products using 75nm trench technology is under co-development by Qimonda and Nanya Technology.
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