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Mar. Shipment qualification and start of volume ramp of 2Gb DDR3 DRAM product in 42nm
process technology
Apr. Shipment qualification of 2Gb low-power DDR1 mobile DRAM product in 50nm
process technology
Aug. Started pilot run of 30nm process technology
Sep. Completed the conversion of total monthly wafer capacity into 42nm process technology
Feb. NTD 14.4 billion rights offering
Apr. Shipment qualification and start of volume ramp of 2Gb DDR3 DRAM product
in 50nm process technology
Sep. Started pilot run of 42nm process technology
Oct. Started qualification lots of 2Gb low-power DDR1 mobile DRAM in 50nm process technology
Dec. Completed the conversion of total monthly wafer capacity of approximately 130 thousand
into 50nm process technology
Aug. USD 310 million offering of Global Depositary Shares (GDS) on Luxembourg Stock Exchange
Sep. Started pilot run of 50nm stack-technology
Year 2008
Jun. Shipment qualification of 1Gb DDR3 DRAM product in 70nm process
Mar. Shipment qualification of 1Gb DDR2 DRAM product in 70nm productivity shrink
process technology
Nov. Micron acquired 35.5% stake in Inotera from Qimonda
Year 2007
Mar. Grand Opening of Fab-2
May. First Silicon start in 70nm technology and introduction of 80nm technology
Sep. Combined capacity of Fab-1 and Fab-2 reached approximately 120 thousand wafer
starts per month
Sep. Shipment qualification of 512Mb DDR2 DRAM product in 80nm process technology
Nov. Shipment qualification of both 512Mb and 1Gb DDR2 DRAM product in 70nm
process technology
Jan. Shipment qualification of 512Mb DDR2 DRAM product in 90nm technology
Mar. Listing on Taiwan Stock Exchange
May. Offering of Global Depositary Shares (GDS) on Luxembourg Stock Exchange
Aug. Reached 62 thousand wafer starts per month and total wafer starts in 90nm in Fab-1
Sep. Shipment qualification of 1Gb DDR2 DRAM product in 90nm technology
Oct. Equipment move-in of Fab-2
May. Groundbreaking of Fab-2
Jul. Reached 54 thousand wafer starts per month in Fab-1
Aug. Reached 60 thousand wafer starts per month in Fab-1
Nov. Shipment qualification of 512Mb DDR1 DRAM product in 90nm technology
Apr. First Wafer of 256Mb DDR1 DRAM manufactured in 110nm technology
Jun. Grand Opening of Headquarters
Jul. Shipment qualification of 256Mb DDR1 DRAM product in 110nm technology
Sep. Shipment qualification of 512Mb DDR2 DRAM product in 110nm technology
Oct. Reached 24 thousand wafer starts per month in Fab-1
Jan. Inotera Memories. Inc. incorporated
Oct. Completion of Fab-1 construction
Dec. Equipment move-in of Fab-1
May. Nanya and Infineon signed Memorandum of Understanding
Aug. Construction start of Inotera's first 300mm fab (Fab-1)
Nov. Nanya and Infineon signed Joined Development & Jointed Venture Agreement
Dec. Groundbreaking ceremony of Inotera Headquarters
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