Milestones Print Search Year 2008                      Mar.    Shipment qualification of 1Gb DDR2 DRAM product in 75/70nm productivity shrink                               process technology                     Jun.    Shipment qualification of 1Gb DDR3 DRAM product in 75/70nm process technology Year 2007                               Mar.    Grand Opening of Fab-2                                     May.    First Silicon start in 75/70nm technology and introduction of 80nm technology                     Sep.    Combined capacity of Fab-1 and Fab-2 reached approximately 120 thousand wafer                                 starts per month                     Sep.    Shipment qualification of 512Mb DDR2 DRAM product in 80nm process technology                     Nov.    Shipment qualification of both 512Mb and 1Gb DDR2 DRAM product in 75/70nm                                 process technology Year 2006                      Jan.    Shipment qualification of 512Mb DDR2 DRAM product in 90nm technology                     Mar.    Listing on Taiwan Stock Exchange                     May.    Offering of Global Depositary Shares (GDS) on Luxembourg Stock Exchange                     Aug.    Reached 62 thousand wafer starts per month and total wafer starts in 90nm in Fab-1                     Sep.    Shipment qualification of 1Gb DDR2 DRAM product in 90nm technology                     Oct.     Equipment move-in of Fab-2 Year 2005                      May.    Groundbreaking of Fab-2                     Jul.      Reached 54 thousand wafer starts per month in Fab-1                     Aug.    Reached 60 thousand wafer starts per month in Fab-1                     Nov.    Shipment qualification of 512Mb DDR1 DRAM product in 90nm technology Year 2004                      Apr.    First Wafer of 256Mb DDR1 DRAM manufactured in 110nm technology                     Jun.    Grand Opening of Headquarters                      Jul.     Shipment qualification of 256Mb DDR1 DRAM product in 110nm technology                     Sep.   Shipment qualification of 512Mb DDR2 DRAM product in 110nm technology                     Oct.    Reached 24 thousand wafer starts per month in Fab-1 Year 2003                      Jan.    Inotera Memories. Inc. incorporated                     Oct.    Completion of Fab-1 construction                     Dec.   Equipment move-in of Fab-1 Year 2002                      May.    Nanya and Infineon signed Memorandum of Understanding                     Aug.    Construction start of Inotera's first 300mm fab (Fab-1)                     Nov.    Nanya and Infineon signed Joined Development & Jointed Venture Agreement                     Dec.    Groundbreaking ceremony of Inotera Headquarters