產品資訊

簡介
華亞科技為一先進晶圓製造廠,使用最先進晶圓及製程技術,生產標準型動態隨機存取記憶體。


目前生產產品
50nm 2Gb DDR3 SDRAM

Process Technology

50 nm with stack capacitor

Organization

x4, x8, x16

Burst Length

4, 8

CAS Latency

CAS READ latency (CL): 5, 6, 7, 8, 9, 10, or 11

CAS WRITE latency (CWL): 5, 6, 7, 8, based on tCK

Power Supply

VDD = VDDQ = +1.5V ±0.075V


70 nm 512Mb DDR2 SDRAM 

Process Technology

75 nm with deep trench capacitor

Organization

x4, x8, x16

Burst Length

4, 8

CAS Latency

3, 4, 5, 6, (7 optional, only at higher frequencies)

Power Supply

1.8V +/- 0.1V


70 nm 1Gb DDR2 SDRAM

Process Technology

75 nm with deep trench capacitor

Organization

x4, x8, x16

Burst Length

4, 8

CAS Latency

3, 4, 5, 6, 7, (8 optional, only at higher frequencies)

Power Supply

1.8V +/- 0.1V


70 nm 1Gb DDR3 SDRAM

Process Technology

75 nm with deep trench capacitor

Organization

x4, x8, x16

Burst Length

 8 and burst chop of 4

CAS Latency

CL=5…13, CWL=5…10

Power Supply

1.5V +/- 75mV


90 nm 512 Mb DDR SDRAM

Process Technology

90 nm with deep trench capacitor

Organization

x4, x8, x16

Burst Length

2, 4, or 8

CAS Latency

2, 2.5 and 3

Power Supply

2.5V +/- 0.2V

 

  

 

產品資訊
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