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簡介
華亞科技為一先進晶圓製造廠，使用最先進晶圓及製程技術，生產標準型動態隨機存取記憶體。
目前生產產品
50nm 2Gb DDR3 SDRAM
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Process Technology |
50 nm with stack capacitor |
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Organization |
x4, x8, x16 |
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Burst Length |
4, 8 |
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CAS Latency |
CAS READ latency (CL): 5, 6, 7, 8, 9, 10, or 11
CAS WRITE latency (CWL): 5, 6, 7, 8, based on tCK |
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Power Supply |
VDD = VDDQ = +1.5V ±0.075V |
70 nm 512Mb DDR2 SDRAM
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Process Technology |
75 nm with deep trench capacitor |
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Organization |
x4, x8, x16 |
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Burst Length |
4, 8 |
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CAS Latency |
3, 4, 5, 6, (7 optional, only at higher frequencies) |
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Power Supply |
1.8V +/- 0.1V |
70 nm 1Gb DDR2 SDRAM
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Process Technology |
75 nm with deep trench capacitor |
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Organization |
x4, x8, x16 |
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Burst Length |
4, 8 |
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CAS Latency |
3, 4, 5, 6, 7, (8 optional, only at higher frequencies) |
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Power Supply |
1.8V +/- 0.1V |
70 nm 1Gb DDR3 SDRAM
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Process Technology |
75 nm with deep trench capacitor |
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Organization |
x4, x8, x16 |
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Burst Length |
8 and burst chop of 4 |
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CAS Latency |
CL=5…13, CWL=5…10 |
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Power Supply |
1.5V +/- 75mV |
90 nm 512 Mb DDR SDRAM
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Process Technology |
90 nm with deep trench capacitor |
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Organization |
x4, x8, x16 |
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Burst Length |
2, 4, or 8 |
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CAS Latency |
2, 2.5 and 3 |
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Power Supply |
2.5V +/- 0.2V |
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